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Flere publikasjoner
- Surface Examination of Structure Loss in N-Type Czochralski Silicon Ingots
- Novel combinatory method for surface and crystallinity analysis of crystalline materials: Combinatory analysis method for crystalline materials surface Les publikasjonen
- Electrical properties and microstructure of crystalline silicon ingots grown from quartz crucibles with and without diffusion barriers
- Novel technique to study the wet chemical etching response of multi-crystalline silicon wafers Les publikasjonen
- Inventory of Waste Materials from Silicon Ingot and Wafer Manufacturing for a Circular PV Value Chain
- Microstructure and electrical properties of multi- crystalline silicon ingots made in silicon nitride crucibles
- Dynamic observation of dislocation evolution and interaction with twin boundaries in silicon crystal growth using in – situ synchrotron X-ray diffraction imaging
- Application of 7N In as secondary cathode for the direct current-glow discharge mass spectrometry analysis of solid, fused high-purity quartz Les publikasjonen
- Interfacial atomic structure and electrical activity of nano-facetted CSL grain boundaries in high-performance multi-crystalline silicon
- The effect of preliminary heat treatment on the durability of reaction bonded silicon nitride crucibles for solar cells applications Les publikasjonen
Annen formidling
- Sustainability and Circularity in Solar Energy Development
- COP29: Solenergi må utvikles med bærekraft og sirkularitet som forutsetning
- Fordeler med solkraftverk på jord- og skogbruksarealer
- Modelling of Agrivoltaics in Norway
- Analysis of Global Trends in Agrivoltaic Research
- Inventory of Waste Materials from Silicon Ingot and Wafer Manufacturing for a Circular PV Value Chain
- DESTINY -How to optimize the utilization of PV in off-grid energy systems?
- Testing bifacial solar panels in agrivoltaics - a do-it-yourself project
- Modelling of an electrically active Σ9{110} grain boundary
- In-situ investigation of an artificial designed ∑27 grain boundary and dislocations during directional solidification of silicon