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Thermodynamic computations of the interaction coefficients between boron and phosphorus and common impurity elements in liquid silicon

Abstract

Using the thermodynamic software FACT, and the SINTEF database for high purity silicon, the interaction coefficients between the doping elements boron and phosphorus and a range of impurity elements (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, N, Na, Ni, O, Sn, Ti, V, Zn, Zr) have been calculated in liquid silicon in the temperature range 1420-1620oC. The calculations predict significant interactions between boron and phosphorus and all the evaluated elements, except between phosphorus and nitrogen, where no significant interaction was found

Category

Academic article

Language

English

Author(s)

Affiliation

  • SINTEF Industry / Sustainable Energy Technology

Year

2013

Published in

Computer Methods in Materials Science

ISSN

1641-8581

Volume

13

Issue

3

Page(s)

407 - 411

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