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Diffusion at anodically bonded interfaces

Abstract

Diffusion of gas molecules into cavities closed by anodic bonding has
been quantified by annealing of specially designed test structures.
Annealing has been performed at temperatures in the range 150-430oC for
several days. An increased concentration of molecules within the closed
cavities after heat treatments is veri-fied both electrically and
optically. The diffusion of gas into the cavities is found to be
substantial at tem-peratures above 300oC. A diffusion parameter, the
diffusion coefficient times the height of the bonded interface, is
found from curve fitting of experimental data with an analytic
expression for diffusion.

Category

Poster

Language

English

Author(s)

  • Maaike Margrete Visser Taklo
  • Sigurd Moe
  • Anders Bror Hanneborg

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems
  • University of Oslo

Presented at

The 11th workshop on Micromachining, Micromechanics and Microsystems

Place

Uppsala, Sweden

Date

01.10.2000

Year

2000

View this publication at Cristin