Abstract
Depth profiles of the sodium distribution at the bonded interface of
silicon wafers, bonded with an intermediate borosilicate glass film,
were recorded with Secondary Ion Mass Spectrometry (SIMS). A layer of
silicon dioxide was present under the thin layer of glass. Sodium was
found to pile up at both sides of the SiO2. The glass layer was
sputtered onto the wafers. Sputtered glass films were analysed before
bonding with Electron Dispersive X-ray Spectroscopy (EDX), and with a
microprobe, in order to estimate the content of sodium in the films.
Glass films deposited by e-beam evaporation were included in the EDX
measurements for comparison purposes.
silicon wafers, bonded with an intermediate borosilicate glass film,
were recorded with Secondary Ion Mass Spectrometry (SIMS). A layer of
silicon dioxide was present under the thin layer of glass. Sodium was
found to pile up at both sides of the SiO2. The glass layer was
sputtered onto the wafers. Sputtered glass films were analysed before
bonding with Electron Dispersive X-ray Spectroscopy (EDX), and with a
microprobe, in order to estimate the content of sodium in the films.
Glass films deposited by e-beam evaporation were included in the EDX
measurements for comparison purposes.
