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MEMS structures for wafer-level bonding characterization

Abstract

The paper presents the first results on wafer-level SOI-LTCC anodic bonding investigation for low-cost packaging. Pressure sensors for investigating the SOI-LTCC bond hermeticity and clamped-clamped bridge stress sensors for measuring the stress induced by the bonding have been designed, simulated, fabricated and characterized. The bond strength of silicon-LTCC bond was assessed by pull tests.

Category

Academic lecture

Language

English

Author(s)

  • Kari Schjølberg-Henriksen

Affiliation

  • SINTEF Digital / Smart Sensors and Microsystems

Presented at

THe 20th Micromechanics Europe Workshop

Place

Toulouse

Date

20.09.2009 - 22.09.2009

Year

2009

View this publication at Cristin