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Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

Abstract

Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ∼5 nm thick CuO interfacial layer. In comparison to the reactively sputtered Cu2O, the ceramic-sputtered films are less strained and appear to contain nanovoids. Irrespective of polarity, the Cu2O grown by reactive sputtering is observed to have (111)Cu2O||(0001)ZnO epitaxial relationship, but in the case of ceramic sputtering the films are found to show additional (110)Cu2O reflections when grown on O-polar surface. The observed CuO interfacial layer can be detrimental for the performance of Cu2O/ZnO heterojunction solar cells reported in the literature.

Category

Academic article

Client

  • Research Council of Norway (RCN) / 245963
  • NORTEM / 197405
  • Sigma2 / NN2615K
  • Research Council of Norway (RCN) / 216104

Language

English

Author(s)

  • Jiantuo Gan
  • Sandeep Madhukar Gorantla
  • Heine Nygard Riise
  • Øystein Slagtern Fjellvåg
  • Spyridon Diplas
  • Ole Martin Løvvik
  • Bengt Gunnar Svensson
  • Edouard Monakhov
  • Anette Eleonora Gunnæs

Affiliation

  • University of Oslo
  • SINTEF Industry

Year

2016

Published in

Applied Physics Letters

ISSN

0003-6951

Publisher

AIP Publishing (American Institute of Physics)

Volume

108:152110

Issue

15

Page(s)

1 - 5

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