Abstract
This study aims at better understanding the generation of dislocations causing a structure loss issue during the pulling of Czochralski silicon ingots. Several industrial-scale n-type ingots containing this issue were characterized. The generation and propagation of dislocations were observed in each ingot along with an investigation of the perturbation at the origin of the structure loss. The results show that for the two ingots characterized in this study, particles entering in contact with the ingot edge during crystal growth are responsible for the generation of dislocations.
Moreover, the propagation of dislocations was compared for two different structure loss origins: particles in contact with the ingot edge and the crystallization around a gas bubble (pinhole) in the middle of the ingot. In each case, a fast transition between the original dislocation-free growth and a growth with dislocations was observed at the perturbation position. Differences in the propagation of slip dislocations backward in the crystal are discussed as well as differences in the transition to a multicrystalline silicon growth regime. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Moreover, the propagation of dislocations was compared for two different structure loss origins: particles in contact with the ingot edge and the crystallization around a gas bubble (pinhole) in the middle of the ingot. In each case, a fast transition between the original dislocation-free growth and a growth with dislocations was observed at the perturbation position. Differences in the propagation of slip dislocations backward in the crystal are discussed as well as differences in the transition to a multicrystalline silicon growth regime. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)