Abstract
The lack of robust and reliable packaging methods are considered to be one of the main challenges for the next generation of high temperature electronics (>200 °C). Power electronics are especially difficult to operate in this environment. This project investigated packaging technologies suitable for a high temperature power module for operation up to 250 °C. The key technologies investigated were:
• A novel type ceramic substrate active metal brazed (AMB) silicon nitride (Si3N4) showed no signs of degradation.
• A state-of-the-art Au-Sn solid-liquid interdiffusion (SLID) die attach was developed.
• Silicon carbide reinforced aluminium (AlSiC) with cold sprayed Cu was used as a base plate.
• Different thermal interface materials were investigated.
• Finally, a power module concept was developed. It was based on silicon carbide (SiC) bipolar transistors (BJT).
The main conclusion drawn from this project is that reliable packaging technologies for 200 °C and beyond seem possible. Suitable packaging technologies are emerging but commercially available electronic components compatible with this temperature range and these novel technologies are still very sparse.
Oppdragsgiver: Norwegian research council
• A novel type ceramic substrate active metal brazed (AMB) silicon nitride (Si3N4) showed no signs of degradation.
• A state-of-the-art Au-Sn solid-liquid interdiffusion (SLID) die attach was developed.
• Silicon carbide reinforced aluminium (AlSiC) with cold sprayed Cu was used as a base plate.
• Different thermal interface materials were investigated.
• Finally, a power module concept was developed. It was based on silicon carbide (SiC) bipolar transistors (BJT).
The main conclusion drawn from this project is that reliable packaging technologies for 200 °C and beyond seem possible. Suitable packaging technologies are emerging but commercially available electronic components compatible with this temperature range and these novel technologies are still very sparse.
Oppdragsgiver: Norwegian research council
