Abstract
SINTEF MiNaLab has a long-standing experience in the production of planar radiation detectors on
N-type silicon substrates. In recent years, a growing interest in sensors produced on P-type substrates was demonstrated on many fronts. N-on-P sensor technology is now becoming the “to-go
choice”, especially in fields where radiation hardness is crucial (e.g. CERN experiments) and/or a
faster response time is needed.
In the past two years SINTEF MiNaLab has invested heavily in the development of its own N-on-P
silicon sensors technology. Great effort was put into assessing different layout implementations that
would optimize the sensor’s electrical characteristics while achieving the desired surface radiation
hardness.
We have recently completed a new prototyping fabrication run of N-on-P silicon sensors. The device
of reference for the development of the technology was the standard SINTEF test diode. Many geometrical implementations were included, featuring variable numbers of guard-rings and field-plate
designs. Two different sets of pixels detectors were also included together with other test structures
for technology evaluation. Surface isolation was realized with P-spray and a total of 6 different
implantation doses where tested to understand their impact on the electrical characteristics of the
sensors and identify a dose that can provide a good isolation before and after irradiation. This work
will briefly describe the wafer layout, the fabrication process and will focus on the electrical characterization results, finally outlining the plans for irradiation tests. Conclusions will be drawn on the
status of the technology and the capability for future sensor production will be discussed.
N-type silicon substrates. In recent years, a growing interest in sensors produced on P-type substrates was demonstrated on many fronts. N-on-P sensor technology is now becoming the “to-go
choice”, especially in fields where radiation hardness is crucial (e.g. CERN experiments) and/or a
faster response time is needed.
In the past two years SINTEF MiNaLab has invested heavily in the development of its own N-on-P
silicon sensors technology. Great effort was put into assessing different layout implementations that
would optimize the sensor’s electrical characteristics while achieving the desired surface radiation
hardness.
We have recently completed a new prototyping fabrication run of N-on-P silicon sensors. The device
of reference for the development of the technology was the standard SINTEF test diode. Many geometrical implementations were included, featuring variable numbers of guard-rings and field-plate
designs. Two different sets of pixels detectors were also included together with other test structures
for technology evaluation. Surface isolation was realized with P-spray and a total of 6 different
implantation doses where tested to understand their impact on the electrical characteristics of the
sensors and identify a dose that can provide a good isolation before and after irradiation. This work
will briefly describe the wafer layout, the fabrication process and will focus on the electrical characterization results, finally outlining the plans for irradiation tests. Conclusions will be drawn on the
status of the technology and the capability for future sensor production will be discussed.
