Atomistic approach to simulate kink migration and kink-pair formation in silicon: The kinetic activation-relaxation technique
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Category
Academic article
Client
- Research Council of Norway (RCN) / 255326
- Sigma2 / NN9158K
Language
English
Author(s)
- Simen Nut Hansen Eliassen
- Jesper Friis
- Inga Gudem Ringdalen
- Normand Mousseau
- Mickaël Trochet
- Yanjun Li
Affiliation
- Norwegian University of Science and Technology
- SINTEF Industry / Materials and Nanotechnology
- University of Montreal
- National Center for Scientific Research
Year
2019Published in
Physical review B (PRB)
ISSN
2469-9950
Volume
100
Issue
15