Abstract
In this paper, the separation of phosphorus from metallurgical-grade silicon was investigated based on an Mg alloying and HCl leaching approach. Experimental results show that P concentration was reduced from initial 15.1 ppmw to 0.2 ppmw with also large extent removal of metallic impurities by two times Mg alloying-leaching purification. The mechanism of enhanced P separation is clarified owing to the strong affinity between Mg and P, which is validated by SIMS elemental mapping. A two-parameter analytical model was developed to predict the P removal degree based on the variables of alloying metal concentration and interaction coefficient between alloying metal and P. The model is validated with experimental results and the interaction coefficient ε^P_{Mg In Si} was obtained as −10.8. This approach can be applied to model the removal of impurity which follows Gulliver-Scheil solidification from other binary alloying systems. Furthermore, in order to study the effect of applied alloying-leaching operation times, a model was proposed which establishes the mathematical relationships among key processing variables like initial and target P concentrations, the amount of the alloying metal, and the process operation times.
