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Effects of laser wavelength and fluence in pulsed laser deposition of Ge films

Abstract


Nanosecond lasers with ultra‐violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10‐6 Torr). Time‐integrated optical emission spectra were obtained for laser fluence from 0.5–10 J/cm2. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge+ ions above some threshold fluence. The deposited amorphous thin‐film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

Category

Academic article

Language

English

Author(s)

  • Seong Shan Yap
  • Wee Ong Siew
  • Cecile Ladam
  • Turid Worren Reenaas
  • Teck Yong Tou

Affiliation

  • Norwegian University of Science and Technology
  • Malaysia
  • SINTEF Industry / Materials and Nanotechnology

Year

2011

Published in

AIP Conference Proceedings

ISSN

0094-243X

Publisher

AIP Publishing (American Institute of Physics)

Volume

1328

Issue

1

Page(s)

305 - 307

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