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Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon

Category

Academic article

Language

English

Author(s)

Affiliation

  • Norwegian University of Science and Technology
  • Unknown

Year

2007

Published in

Journal of Applied Physics

ISSN

0021-8979

Publisher

AIP Publishing (American Institute of Physics)

Volume

101

Page(s)

053515-1 - 053515-9

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