Abstract
We present a comparative study of the 1.54lm photoluminescence (PL) from Al2O3:(Er, Si) and Al2O3:(Er, Ge) films co-sputtered on Si substrates using a composite target. The PL yield of Si- and Ge- doped films subjected to different thermal treatment in the range 500–1100 °C is referenced against that of a control Al2O3:(Er) structure. The Er-related emission reaches maximum upon annealing at 700 °C for the Al2O3:(Er, Si) and 500 °C for the Al2O3:(Er, Ge) films, in both cases decreasing at higher annealing tem- peratures. Ge co-doped films are found to be approximately 20 times less luminous than the reference Al2O3:(Er) structure, whereas Si co-doping leads to greatly enhanced emission at 1.54 lm. By adapting energy filtered transmission electron microscopy (EFTEM), the presence of ����2 nm Si nanoclusters was revealed, whereas no indications of Ge clusters or crystals could be observed implying that mere presence of Ge in the Al2O3 matrix can dramatically reduce the luminescence efficiency. We discuss the possible reasons for not forming the Ge nanoclusters in the Al2O3 host and the apparent quenching of the Er- related emission.
