Charge-Inhomogeneity-Mediated Low-Frequency Noise in One-Dimensional Edge-Contacted Graphene Heterostructure Field Effect Transistors
Category
Academic article
Client
- Research Council of Norway (RCN) / 250555
- Japan Society for the Promotion of Science (JSPS) / 20H00354
- Japan Society for the Promotion of Science (JSPS) / 19H05790
- National Science Foundation / 2145962
- Research Council of Norway (RCN) / 295864
- Research Council of Norway (RCN) / 280788
- Japan Society for the Promotion of Science (JSPS) / 21H05233
- U.S. Department of Energy (DOE) / DE-NA0003525
Language
English
Author(s)
- Aroop Behera
- Thomas Harris
- Douglas Pete
- Christopher Smyth
- Marta Benthem Muñiz
- Ozhan Koybasi
- Takashi Taniguchi
- Kenji Watanabe
- Branson Delano Belle
- Suprem Das
Affiliation
- Kansas State University
- Sandia National Laboratories
- SINTEF Industry
- Swiss Federal Institute of Technology of Lausanne
- SINTEF Digital / Smart Sensors and Microsystems
- National Institute for Materials Science
- SINTEF Industry / Sustainable Energy Technology
Year
2024Published in
ACS Applied Nano Materials
ISSN
2574-0970
Publisher
American Chemical Society (ACS)
Volume
7
Issue
11
Page(s)
12366 - 12375