Unlocking the Potential of 2D WTe2/ZrS2 van der Waals Heterostructures for Tunnel Field-Effect Transistors: Broken-Gap Band Alignment and Electric Field Effects
Category
Academic article
Language
English
Author(s)
- Konstantina Iordanidou
Affiliation
- SINTEF Industry
Year
2024Published in
Chemistry of Materials
ISSN
0897-4756
