Abstract
Dielectric properties of a two-layer of PZT/ZrO2 thin film have been characterized up to 50 GHz using the conformal mapping method. PZT/ZrO2 films are of interest to RF MEMS capacitive shunt switches due to the relatively high dielectric constant. In this measurement, relative dielectric constant values of approximately 120 and 200 were obtained at 50 GHz for the PZT/ZrO2 film and PZT film on ZrO2, respectively. Corrected loss tangents of 0.06 and 0.03 were obtained at 25 GHz for PZT/ZrO2 and single ZrO2, respectively.
