Publikasjoner og ansvarsområder
Aluminium substituted lanthanum based perovskite type oxides, non-stoichiometry and performance in methane partial oxidation by framework oxygen
A series of Rh-promoted La0.75Sr0.25(Fe0.80Co0.20)(1-x)AlxO3-δ (x = 0, 0.10, 0.25, 0.40, 0.60) samples were investigated as oxygen reservoirs for the conversion of CH4 to syngas at 873 K and 1 atm. Neutron powder diffraction studies revealed a decreasing rhombohedral distortion on increasing Al-cont...
Structural and physical characteristics of fine perlite expanded with a novel method in a vertical electric furnace
Expanded perlite is a popular lightweight material widely used due to its outstanding insulating properties. The expansion conditions directly affect perlite characteristics and its suitability for use in various applications. The conventional industrial expansion technique suffers disadvantages tha...
Structure and optical properties of aSiAl and aSiAlHx magnetron sputtered thin films
Chemical and Structural Investigations of Grain Boundaries in Y-Doped BaZrO3
Structural- and Compositional Investigations of Grain Boundaries in Y-Doped BaZrO3
Cubic silicon carbide as a potential photovoltaic material
In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for photovoltaics has not been considered due to the band gap of 2.3 eV being too large ...
Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering
Epitaxial Cu2O films grown by reactive and ceramic radio frequency magnetron sputtering on single crystalline ZnO (0001) substrates are investigated. The films are grown on both O- and Zn-polar surface of the ZnO substrates. The Cu2O films exhibit a columnar growth manner apart from a ∼5 nm thick Cu...
Characterization of B-implanted 3C-SiC for intermediate band solar cells
Boron-implanted 3C-SiC for intermediate band solar cells
Sublimation-grown 3C-SiC crystals were implanted with 2 atomic percent of boron ions at elevated temperature (400 °C) using multiple energies (100 to 575 keV) with a total dose of 8.5×1016 atoms/cm2. The samples were then annealed at 1400, 1500 and 1600 °C for 1h at each temperature. The buried boro...